Many-impurity scattering on the surface of a topological insulator

نویسندگان

چکیده

Abstract We theoretically address the impact of a random distribution non-magnetic impurities on electron states formed at surface topological insulator. The interaction electrons with is accounted for by separable pseudo-potential method that allows us to obtain closed expressions density states. Spectral properties are assessed means Green’s function averaged over disorder realisations. For comparison purposes, configurationally calculated two different self-consistent methods, namely Born approximation (SCBA) and coherent potential (CPA). latter often regarded as best single-site theory study spectral disordered systems. However, although large number works employ SCBA analysis many-impurity scattering insulator, CPA studies same problem scarce in literature. In this work, we find overestimates compared predictions. difference more pronounced when increasing magnitude disorder.

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ژورنال

عنوان ژورنال: Scientific Reports

سال: 2021

ISSN: ['2045-2322']

DOI: https://doi.org/10.1038/s41598-021-84801-w